High performance langasite based SAW NO2 gas sensor using 2D g-C3N4@TiO2 hybrid nanocomposite.

Nitrogen dioxide (NO2) gas has emerged as a severe air pollutant that causes damages to the environment, human life and global ecosystems etc. However, the currently available NO2 gas sensors suffers from insufficient selectivity, sensitivity and long response times that impeding their practical applicability for room temperature (RT) gas sensing. Herein, we report a high performance langasite (LGS) based surface acoustic wave (SAW) RT NO2 gas sensor using 2-dimensional (2D) g-C3N4@TiO2 nanoplates (NP) with {001} facets hybrid nanocomposite as a chemical interface. The g-C3N4@TiO2 NP/LGS SAW device showed a significant negative frequency shift (∆f) of ~19.8 kHz which is 2.4 fold higher than that of the pristine TiO2 NP/LGS SAW sensor toward 100 ppm of NO2 at RT. In addition, the hybrid SAW device fascinatingly exhibited a fast response/recovery time with a low detection limit, high selectivity, and an effective long term stability toward NO2 gas. It also exhibited an enhanced and robust negative frequency shifts under various relative humidity conditions ranging from 20% to 80% for 100 ppm of NO2 gas. The high performance of the g-C3N4 @TiO2 NP/LGS SAW gas sensor can be attributed to the enhanced mass loading effect which was assisted by the large surface area, oxygen vacancies, OH and amine functional groups of the n-n hybrid heterojunction of g-C3N4@TiO2 NP that provide abundant active sites for the adsorption and diffusion of NO2 gas molecules. These results emphasize the significance of the integration of 2D materials with metal oxides for SAW based RT gas sensing technology holds great promise in environmental protection.

Proliferation of the Light and Gas Interaction with GaN Nanorods Grown on a V-Grooved Si(111) Substrate for UV Photodetector and NO2 Gas Sensor Applications.

Although excellent milestones of III-nitrides in optoelectronic devices have been achieved, the focus on the optimization of their geometrical structure for multiple applications is very rare. To address this issue, we exclusively designed a prototype device to enhance the photoconversion efficiency and gas interaction capabilities of GaN nanorods (NRs) grown on a V-grooved Si(100) substrate with Si(111) facets for photodetector and gas sensor applications. Photoluminescence studies have demonstrated an increased surface-to-volume ratio and light trapping for GaN NRs grown on V-grooved Si(111). GaN NRs on V-grooved Si(100) with Si(111) facets exhibited high photodetection performance in terms of photoresponsivity (217 mA/cm2), detectivity (3 × 1013 Jones), and external quantum efficiency (2.73 × 105%) compared to GaN NRs grown on plain Si(111). Owing to the robust interconnection between NRs and a high surface-to-volume ratio, the GaN NRs grown on V-grooved Si(100) with Si(111) facets probed for NO2 detection with the assistance of photonic energy. The photo-assisted sensing makes it possible to detect NO2 gas at the ppb level at room temperature, resulting in significant power reduction. The device showed high selectivity to NO2 against other target gases, such as NO, H2S, H2, NH3, and CO. The device showed excellent long-term stability at room temperature; the humidity effect on the device performance was also examined. The excellent device performance was due to the following: (i) benefited from the V-grooved Si structure, GaN NRs significantly trapped the incident light, which promoted high photocurrent conversion efficiency and (ii) GaN NRs grown on V-grooved Si(100) with Si(111) facets increased the surface-to-volume ratio and thus improved the gas interaction with a better diffusion ratio and high light trapping, which resulted in increased response/recovery times. These results represent an important forward step in prototype devices for multiple applications in materials research.

Ag Nanowire-Plasmonic-Assisted Charge Separation in Hybrid Heterojunctions of Ppy-PEDOT:PSS/GaN Nanorods for Enhanced UV Photodetection.

The surface states, poor carrier life, and other native defects in GaN nanorods (NRs) limit their utilization in high-speed and large-gain ultraviolet (UV) photodetection applications. Making a hybrid structure is one of the finest strategies to overcome such impediments. In this work, a polypyrrole (Ppy)-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/GaN NRs hybrid structure is introduced for self-powered UV photodetection applications. This hybrid structure yields high photodetection performance, while pristine GaN NRs showed negligible photodetection properties. The ability of the photodetector is further boosted by functionalizing the hybrid structure with Ag nanowires (NWs). The Ag NWs-functionalized hybrid structure exhibited a responsivity of 3.1 × 103 (A/W), detectivity of 3.19 × 1014 Jones, and external quantum efficiency of 1.06 × 106 (%) under a UV illumination of λ = 382 nm. This high photoresponse is due to the huge photon absorption rising from the localized surface plasmonic effect of a Ag NWs network. Also, the Ag NWs significantly improved the rising and falling times, which were noted to be 0.20 and 0.21 s, respectively. The model band diagram was proposed with the assistance of X-ray photoelectron spectroscopy to explore the origin of the superior performance of the Ag NWs-decorated Ppy-PEDOT:PSS/GaN NRs photodetector. The proposed hybrid structure seems to be a promising candidate for the development of high-performance UV photodetectors.

Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods.

Recently, III-nitride semiconductor nanostructures, especially InGaN/GaN quantum well nanorods (NRs), have been established as a promising material of choice for nanoscale optoelectronics and photoelectrochemical (PEC) water-splitting applications. Due to the large number of surface states, III-nitride NRs suffer from low quantum efficiency. Therefore, control of the surface states is necessary to improve device performance in real-time applications. In this work, we investigated the effect of hydrogen plasma treatment on the optical properties of InGaN/GaN single-quantum-well (SQW) NRs. The low-temperature photoluminescence (PL) studies revealed that yellow and green emissions overlapped and the yellow band is more dominant in the pristine InGaN/GaN SQW NRs. However, the emission corresponding to yellow luminescence was strongly suppressed and the green emission is more intensified in hydrogenated InGaN/GaN SQW NRs. Furthermore, the time-resolved PL spectroscopy studies revealed that the carrier lifetimes of hydrogenated InGaN/GaN SQW NRs are relatively short compared to the pristine InGaN/GaN SQW, indicating the effective reduction of non-radiative centers. From the PEC measurement, the photocurrent density of hydrogenated InGaN/GaN SQW NRs in the H2SO4 solution is found to be 5 mA cm-2 at -0.48 V versus reversible hydrogen electrode, which is 3.5-fold larger than that of pristine ones. These findings shed new light on the significance of surface treatment on the optical properties and thus nanostructured photoelectrodes for PEC applications.

Hydrogenation-produced In2O3/InN core-shell nanorod and its effect on NO2 gas sensing behavior.

In this work, for the first time, we have made InN/In2O3 core-shell heterostructure by hydrogen plasma treatment. InN nanorods (NRs) were grown by using plasma-assisted molecular beam epitaxy, and hydrogen plasma treatment was performed by using reactive ion etching at room temperature. From x-ray photoemission spectroscopy studies, it was observed that the bonding partner of In changes from N to O and N 1s completely disappeared in the hydrogenated InN NRs. Furthermore, high-resolution transmission electron microscopy revealed the formation of InN/In2O3 core-shell NRs by hydrogenation plasma treatment. The resistance of pristine InN NRs was decreased in NO2 ambient. Interestingly, the resistance of the InN/In2O3 core-shell was increased while introducing NO2 gas. InN NR surface exhibits downward band bending due to the electron accumulation, in NO2 ambient, and the surface band bending was decreased due to the increase in the bulk conduction channel. This reversed gas sensing behavior in InN/In2O3 core-shell NRs was attributed to the increase in depletion layer while reducing the conduction channel width by the absorption of NO2. The InN/In2O3 coreshell NRs exhibited a response of 22.43% at 50 °C, which was 5.11 times higher than that of pristine InN NRs.